SIHD2N80E-GE3 - MOSFET N-CH 800V 2.8A DPAK

Manufacturer Part Tau

SIHD2N80E-GE3

Ā-wāhanga Tau

ABC-SIHD2N80E-GE3

Manufacturer

Vishay Siliconix

Whakaahuatanga poto

MOSFET N-CH 800V 2.8A DPAK

Tūnga RoHS

Arahina noa / RoHS ture

Wā Delivery

1-2 ra

Rahi wātea

973588 Pieces

tohutoro Price

~~USD 0.3362~~

To tatou Price

- (Koa whakapā tatou mo te utu pai: [email protected])

ABC Semiconductor i SIHD2N80E-GE3 i kararehe mō te hokona.

Ōta kōwhiringa, me te kawe wā:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Kōwhiringa utu:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Whakatakotoranga hoki SIHD2N80E-GE3

kounga Guarantee : 365 nga ra pūtāhui

Stock rauemi : Distributor Franchised / Manufacturer Direct

Country o Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

wāhanga Tau : SIHD2N80E-GE3

Manufacturer : Vishay Siliconix

Whakaahuatanga : MOSFET N-CH 800V 2.8A DPAK

rangatū : E

Wāhanga wahi : Active

Momo FET : N-Channel

Hangarau : MOSFET (Metal Oxide)

Whakahinuhinu ki te Rauemi Waiata (Vds) : 800V

Akuanui - Tonu Tonu (Id) @ 25 ° C : 2.8A (Tc)

Koraha Motuhake (RW RW On, Min Rds I) : 10V

Rds On (Max) @ Id, Vgs : 2.75 Ohm @ 1A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Kaari Gate (Qg) (Max) @ Vgs : 19.6nC @ 10V

Vgs (Max) : ±30V

Te Mahinga Whakauru (Ciss) (Max) @ Vds : 315pF @ 100V

Āhuahanga FET : -

Te Whakamau Kaha (Max) : 62.5W (Tc)

Taumaha Mahi : -55°C ~ 150°C (TJ)

Momo Momo : Surface Mount

Paetukutuku Pūrere Kaiwhakarato : D-PAK (TO-252AA)

Paepae / Take : TO-252-3, DPak (2 Leads + Tab), SC-63

Taumaha : -

Here : New me taketake

Hononga e pā ana : SIHD , SIHD2N

tuhinga hoki SIHD2N80E-GE3

Datasheets : SIHD2N80E-GE3.pdf

hua e pā ana mō te SIHD2N80E-GE3 Vishay Siliconix

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