SI8851EDB-T2-E1 - MOSFET P-CH 20V 7.7A MICRO FOOT

Manufacturer Part Tau

SI8851EDB-T2-E1

Ā-wāhanga Tau

ABC-SI8851EDB-T2-E1

Manufacturer

Vishay Siliconix

Whakaahuatanga poto

MOSFET P-CH 20V 7.7A MICRO FOOT

Tūnga RoHS

Arahina noa / RoHS ture

Wā Delivery

1-2 ra

Rahi wātea

2444449 Pieces

tohutoro Price

~~USD 0.133905~~

To tatou Price

- (Koa whakapā tatou mo te utu pai: [email protected])

ABC Semiconductor i SI8851EDB-T2-E1 i kararehe mō te hokona.

Ōta kōwhiringa, me te kawe wā:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Kōwhiringa utu:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Whakatakotoranga hoki SI8851EDB-T2-E1

kounga Guarantee : 365 nga ra pūtāhui

Stock rauemi : Distributor Franchised / Manufacturer Direct

Country o Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

wāhanga Tau : SI8851EDB-T2-E1

Manufacturer : Vishay Siliconix

Whakaahuatanga : MOSFET P-CH 20V 7.7A MICRO FOOT

rangatū : TrenchFET®

Wāhanga wahi : Active

Momo FET : P-Channel

Hangarau : MOSFET (Metal Oxide)

Whakahinuhinu ki te Rauemi Waiata (Vds) : 20V

Akuanui - Tonu Tonu (Id) @ 25 ° C : 7.7A (Ta)

Koraha Motuhake (RW RW On, Min Rds I) : 1.8V, 4.5V

Rds On (Max) @ Id, Vgs : 8 mOhm @ 7A, 4.5V

Vgs (th) (Max) @ Id : 1V @ 250µA

Kaari Gate (Qg) (Max) @ Vgs : 180nC @ 8V

Vgs (Max) : ±8V

Te Mahinga Whakauru (Ciss) (Max) @ Vds : 6900pF @ 10V

Āhuahanga FET : -

Te Whakamau Kaha (Max) : 660mW (Ta)

Taumaha Mahi : -55°C ~ 150°C (TJ)

Momo Momo : Surface Mount

Paetukutuku Pūrere Kaiwhakarato : Power Micro Foot® (2.4x2)

Paepae / Take : 30-XFBGA

Taumaha : -

Here : New me taketake

Hononga e pā ana : SI885 , SI8851E

tuhinga hoki SI8851EDB-T2-E1

Datasheets : SI8851EDB-T2-E1.pdf

hua e pā ana mō te SI8851EDB-T2-E1 Vishay Siliconix

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