SIS606BDN-T1-GE3 - MOSFET N-CHAN 100V POWERPAK 1212

Manufacturer Part Tau

SIS606BDN-T1-GE3

Ā-wāhanga Tau

ABC-SIS606BDN-T1-GE3

Manufacturer

Vishay Siliconix

Whakaahuatanga poto

MOSFET N-CHAN 100V POWERPAK 1212

Tūnga RoHS

Arahina noa / RoHS ture

Wā Delivery

1-2 ra

Rahi wātea

928312 Pieces

tohutoro Price

~~USD 0.3526~~

To tatou Price

- (Koa whakapā tatou mo te utu pai: [email protected])

ABC Semiconductor i SIS606BDN-T1-GE3 i kararehe mō te hokona.

Ōta kōwhiringa, me te kawe wā:: DHL: 2-3 days.; FEDEX: 2-3 days.; UPS: 2-4 days.; TNT: 3-5 days.; EMS: 5-8 days.; Normal Post: 10-15 days.

Kōwhiringa utu:: Paypal (Credit Card); Bank Transfer (Wire Transfer); Western Union; MoneyGram

Whakatakotoranga hoki SIS606BDN-T1-GE3

kounga Guarantee : 365 nga ra pūtāhui

Stock rauemi : Distributor Franchised / Manufacturer Direct

Country o Origin : USA / TAIWAN / MEXICO / MALAYSIA / PHI

wāhanga Tau : SIS606BDN-T1-GE3

Manufacturer : Vishay Siliconix

Whakaahuatanga : MOSFET N-CHAN 100V POWERPAK 1212

rangatū : TrenchFET® Gen IV

Wāhanga wahi : Active

Momo FET : N-Channel

Hangarau : MOSFET (Metal Oxide)

Whakahinuhinu ki te Rauemi Waiata (Vds) : 100V

Akuanui - Tonu Tonu (Id) @ 25 ° C : 9.4A (Ta), 35.3A (Tc)

Koraha Motuhake (RW RW On, Min Rds I) : 7.5V, 10V

Rds On (Max) @ Id, Vgs : 17.4 mOhm @ 10A, 10V

Vgs (th) (Max) @ Id : 4V @ 250µA

Kaari Gate (Qg) (Max) @ Vgs : 30nC @ 10V

Vgs (Max) : ±20V

Te Mahinga Whakauru (Ciss) (Max) @ Vds : 1470pF @ 50V

Āhuahanga FET : -

Te Whakamau Kaha (Max) : 3.7W (Ta), 52W (Tc)

Taumaha Mahi : -55°C ~ 150°C (TJ)

Momo Momo : Surface Mount

Paetukutuku Pūrere Kaiwhakarato : PowerPAK® 1212-8

Paepae / Take : PowerPAK® 1212-8

Taumaha : -

Here : New me taketake

Hononga e pā ana : SIS60 , SIS606BD

tuhinga hoki SIS606BDN-T1-GE3

Datasheets : SIS606BDN-T1-GE3.pdf

hua e pā ana mō te SIS606BDN-T1-GE3 Vishay Siliconix

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